Asymmetric Ferroelectric Gated Reconfigurable WSe2 p–n Homojunction for In-Sensor Neuromorphic Vision Processing

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202520019
Affiliations:
3
Authors:
8
Go to article
Institutions Authors Share
Beijing Institute of Nanoenergy and Nanosystems (BINN), CAS, China
3.333333
 0.42
University of Chinese Academy of Sciences (UCAS), China
2.833333
 0.35
Huairon Laboratory, China
1.833333
 0.23
Interested in Atomic, Molecular and Optical Physics?