Dual-Interface Engineering of the Source Electrode to Overcome the Intrinsic Injection-Leakage Trade-Off in Organic Schottky Barrier Transistors

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202521235
Affiliations:
1
Authors:
7
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Institutions Authors Share
Pohang University of Science and Technology (POSTECH), South Korea
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