Rational Device Design and Doping-Controlled Performance in Fast-Response π-Ion Gel Transistors

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202521674
Affiliations:
4
Authors:
11
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Institutions Authors Share
University of Tsukuba, Japan
8.666667
 0.79
Heidelberg University (Uni Heidelberg), Germany
2.000000
 0.18
Ibaraki University, Japan
0.333333
 0.03
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