In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation
- Journal:
- Advanced Functional Materials
- Published:
- DOI:
- 10.1002/adfm.202522351
- Affiliations:
- 5
- Authors:
- 15
| Institutions | Authors | Share |
|---|---|---|
| Hanyang University (HYU), South Korea | 0.47 | |
| Seoul National University (SNU), South Korea | 0.27 | |
| Sungkyunkwan University (SKKU), South Korea | 0.13 | |
| Sogang University, South Korea | 0.07 | |
| Incheon National University (INU), South Korea | 0.07 |