Continuous Switching of Ferroelectric Domain via Blister-Induced Flexoelectricity in CuInP2S6

Journal:

Advanced Functional Materials

Published:

2025-11-03

DOI:

10.1002/adfm.202523118

Affiliations:

4

Authors:

13

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Institutions	Authors	Share
Beijing Institute of Technology (BIT), China	11.666667 11.666667	0.90
State Key Laboratory of Environment Characteristics and Effects for Near-space, BIT, China	0.833333	0.06
Shijiazhuang Tiedao University (STDU), China	0.500000	0.04

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