Continuous Switching of Ferroelectric Domain via Blister-Induced Flexoelectricity in CuInP2S6

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202523118
Affiliations:
4
Authors:
13
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Institutions Authors Share
Beijing Institute of Technology (BIT), China
11.666667
11.666667
 0.90
State Key Laboratory of Environment Characteristics and Effects for Near-space, China
0.833333
 0.06
Shijiazhuang Tiedao University (STDU), China
0.500000
 0.04
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