Self‐Assembled Monolayer‐Free Area‐Selective Atomic Layer Deposition for Confined Structure Integration of High‐Reliability 3D Phase‐Change Memory

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202524976
Affiliations:
2
Authors:
7
Go to article
Institutions Authors Share
Huazhong University of Science and Technology (HUST), China
6.000000
 0.86
Hubei Yangtze Memory Laboratories, China
1.000000
 0.14
Interested in Nanotechnology?