Voltage-Free Flexoelectric Gating of α-In2Se3-Based Optoelectronic Synapses for Enhanced Visual Memory Applications

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202525617
Affiliations:
3
Authors:
11
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Institutions Authors Share
East China Normal University (ECNU), China
9.500000
 0.86
Shanghai Dianji University (SHDJ), China
1.000000
 0.09
Shanxi University (SXU), China
0.500000
 0.05
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