Intermediate Resistive State in Wafer-Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Journal:

Advanced Functional Materials

Published:

2025-12-30

DOI:

10.1002/adfm.202526682

Affiliations:

10

Authors:

20

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Institutions	Authors	Share
RWTH Aachen University (RWTH Aachen), Germany	14.666667 14.666667	0.73
Peter Grünberg Institute (PGI), FZJ, Germany	2.500000	0.13
Eindhoven University of Technology (TU/e), Netherlands	1.000000	0.05
Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Germany	0.833333	0.04
AIXTRON Ltd., United Kingdom (UK)	0.500000	0.03
Bulgarian Academy of Sciences (BAS), Bulgaria	0.500000	0.03

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