A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202527736
Affiliations:
3
Authors:
9
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Institutions Authors Share
Helmholtz-Zentrum Berlin for Materials and Energy (HZB), Germany
5.000000
 0.56
TU Dresden, Germany
3.000000
 0.33
Free University of Berlin (FU Berlin), Germany
1.000000
 0.11
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