Hypotaxy-Enabled Selective Growth of MoS2 for Laterally-Connected Edge and van der Waals Bottom Contacts

Journal:
Advanced Functional Materials
Published:
DOI:
10.1002/adfm.202528582
Affiliations:
3
Authors:
8
Go to article
Institutions Authors Share
Seoul National University (SNU), South Korea
6.000000
 0.75
Samsung Advanced Institute of Technology (SAIT), South Korea
2.000000
 0.25
Interested in Condensed Matter Physics?