Self-Aligned Spacer Doping in MoS2 High-κ Top-Gate Transistors

Journal:

Advanced Functional Materials

Published:

2026-03-04

DOI:

10.1002/adfm.202530537

Affiliations:

8

Authors:

15

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Institutions	Authors	Share
National Tsing Hua University (NTHU), Taiwan	5.000000	0.33
National Taiwan University (NTU), Taiwan	4.500000	0.30
National Taiwan Normal University (NTNU), Taiwan	3.000000	0.20
Taiwan International Graduate Program in Molecular Science and Technology (TIGP-MST), Taiwan	1.500000	0.10
Institute of Atomic and Molecular Sciences (IAMS), Academia Sinica, Taiwan	1.000000	0.07

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