Oxygen-Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute-In-Memory Systems

Journal:

Advanced Functional Materials

Published:

2026-05-20

DOI:

10.1002/adfm.202531989

Affiliations:

8

Authors:

18

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Institutions	Authors	Share
Ulsan National Institute of Science and Technology (UNIST), South Korea	11.500000 11.500000	0.64
Korea Advanced Institute of Science and Technology (KAIST), South Korea	2.500000	0.14
Seoul National University (SNU), South Korea	1.500000	0.08
Korea Research Institute of Chemical Technology (KRICT), South Korea	1.000000	0.06
Yonsei University, South Korea	1.000000	0.06
Seoul National University of Science and Technology (SeoulTech), South Korea	0.500000	0.03

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