Inner-Layer Indium Doping Achieved Highly Active and Stable Sulfur Vacancies in MoS2 for Superior Sulfur Redox Kinetics

Journal:
Advanced Materials
Published:
DOI:
10.1002/adma.202415986
Affiliations:
3
Authors:
10
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Institutions Authors Share
SYSU-MU Joint Key Laboratory of the Ministry of Education, China
7.000000
 0.70
Zhejiang University (ZJU), China
2.000000
 0.20
Prince Mohammad bin Fahd University (PMU), Saudi Arabia
1.000000
 0.10
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