Direct Observation of Optically Active Mid‐Gap Electronic States in Hexagonal Boron Nitride by Electron Spectroscopy

Journal:

Advanced Materials

Published:

2025-06-03

DOI:

10.1002/adma.202502342

Affiliations:

5

Authors:

7

Go to article

Institutions	Authors	Share
Indian Institute of Technology Jammu (IIT Jammu), India	3.000000	0.43
State University of New York at Stony Brook (SUNY Stony Brook), United States of America (USA)	1.500000	0.21
National Institute for Materials Science (NIMS), Japan	1.000000	0.14
WPI International Center for Materials Nanoarchitectonics (WPI-MANA), NIMS, Japan	1.000000	0.14
Flatiron Institute, Simons Foundation, United States of America (USA)	0.500000	0.07

Interested in Nanotechnology?