Dielectric-Free MoS2/VO2 Junction Field-Effect Transistor with Sensitive and Ultrafast Photoresponse for Light Encrypted Communication

Journal:

Advanced Materials

Published:

2025-06-22

DOI:

10.1002/adma.202503294

Affiliations:

3

Authors:

9

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Institutions	Authors	Share
Donghua University (DHU), China	5.500000	0.61
Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, China	2.500000	0.28
Joint International Research Laboratory of Information Display and Visualization, China	1.000000	0.11

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