High Performance P‐Channel Transistor Based on Amorphous Tellurium Trioxide

Journal:
Advanced Materials
Published:
DOI:
10.1002/adma.202504948
Affiliations:
4
Authors:
11
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Institutions Authors Share
Hanyang University (HYU), South Korea
8.000000
 0.73
Ewha Womans University (Ewha), South Korea
2.000000
 0.18
University of Ulsan (UOU), South Korea
1.000000
 0.09
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