Expanded InSe Crystal Structure with Reduced Intrinsic Defects for High-Performance Field-Effect Transistors

Journal:

Advanced Materials

Published:

2025-10-14

DOI:

10.1002/adma.202506506

Affiliations:

6

Authors:

14

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Institutions	Authors	Share
Shandong University (SDU), China	9.000000	0.64
Shanghai Dianji University (SHDJ), China	2.000000	0.14
School of Chemistry and Chemical Engineering, SDU, China	1.000000	0.07
State Key Laboratory of Crystal Materials (SKLCM), China	1.000000	0.07
Shanghai Institute of Ceramics (SICCAS), CAS, China	1.000000	0.07

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