Vanadium‐Assisted Epitaxy Growth of Wafer‐Scale Bilayer Tungsten Disulfide Ferroelectric Semiconductor Single Crystals with High‐Endurance Memory

Journal:

Advanced Materials

Published:

2025-12-02

DOI:

10.1002/adma.202509638

Affiliations:

5

Authors:

17

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Institutions	Authors	Share
Wuhan University (WHU), China	12.500000 12.500000	0.74
MOE Key Laboratory of Artificial Micro- and Nano-structures, WHU, China	2.500000	0.15
Institute of Technological Sciences, WHU, China	1.000000	0.06
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, NCNST CAS, China	0.500000	0.03
University of Chinese Academy of Sciences (UCAS), China	0.500000	0.03

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