Tailorable Polarity Switching and Optoelectronic Transition in a Gate-Source Integrated 2D Ferroelectric Phototransistor

Journal:

Advanced Materials

Published:

2025-12-30

DOI:

10.1002/adma.202512334

Affiliations:

5

Authors:

17

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Institutions	Authors	Share
MOE Key Laboratory of Optoelectronic Devices and Systems, SZU, China	11.000000 11.000000	0.65
Shenzhen Technology University (SZTU), China	2.000000	0.12
State Key Laboratory of Material Processing and Die and Mould Technology, HUST, China	1.500000	0.09
Huazhong University of Science and Technology (HUST), China	1.500000	0.09
Shandong Academy of Sciences (SDAS), China	1.000000	0.06

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