Ultra-Sensitive Negative Photoconductivity Transistors via Long-Afterglow Doping for All-Optical Encryption

Journal:

Advanced Materials

Published:

2025-10-25

DOI:

10.1002/adma.202514723

Affiliations:

5

Authors:

12

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Institutions	Authors	Share
Ji Hua Laboratory (JHL), China	4.000000	0.33
MOE Key Laboratory of Organic Optoelectronics and Molecular Engineering, Tsinghua, China	2.833333	0.24
State Key Laboratory of Flexible Electronics Technology, Tsinghua, China	2.833333	0.24
Tianjin Key Laboratory of Molecular Optoelectronic Sciences, TJU, China	2.000000	0.17
Henan Academy of Sciences, China	0.333333	0.03

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