Mechanically Gated Vertical Ion Channels for Fast Strain-Sensitive Neuromorphic Memristor

Journal:
Advanced Materials
Published:
DOI:
10.1002/adma.202517859
Affiliations:
5
Authors:
15
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Institutions Authors Share
Southern University of Science and Technology (SUSTech), China
6.333333
 0.42
Shenzhen Institutes of Advanced Technology (SIAT), CAS, China
3.833333
 0.26
MOE Key Laboratory of Polar Materials and Devices, ECNU, China
2.000000
 0.13
Hunan University (HNU), China
1.500000
 0.10
National University of Defense Technology (NUDT), China
1.333333
 0.09
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