Ultra-Low Electric Field Induced Volatile Resistive Switching in Hole-Doped MgTi2O4

Journal:
Advanced Materials
Published:
DOI:
10.1002/adma.202518981
Affiliations:
4
Authors:
8
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Institutions Authors Share
Indian Institute of Technology Kharagpur (IIT Kharagpur), India
4.000000
 0.50
German Electron Synchrotron (DESY), Germany
3.000000
 0.38
Yogoda Satsanga Palpara Mahavidyalaya, India
1.000000
 0.13
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