Artificial Refractory Neuron Based on Cs2AgBiBr6 Nanoionic Memristor for Efficient Motion Information Processing

Journal:

Advanced Materials

Published:

2026-01-04

DOI:

10.1002/adma.202519352

Affiliations:

6

Authors:

8

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Institutions	Authors	Share
Ningbo Institute of Industrial Technology (CNITECH), CAS, China	3.166667	0.40
Ningbo University (NBU), China	2.000000	0.25
University of Chinese Academy of Sciences (UCAS), China	1.333333	0.17
Max Planck Institute for Polymer Research (MPI-P), Germany	1.000000	0.13
Eastern Institute of Technology, Ningbo (EIT), China	0.500000	0.06

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