Tunable Multi-Level Memory States in Compositionally Graded Lead-Free Ferroelectric Thin Films

Journal:

Advanced Materials

Published:

2026-04-05

DOI:

10.1002/adma.202521967

Affiliations:

6

Authors:

12

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Institutions	Authors	Share
State Key Laboratory of Precision Welding and Joining of Materials and Structures, China	5.500000	0.46
Shenyang National Laboratory for Materials Science (SYNL), IMR CAS, China	2.000000	0.17
University of Science and Technology of China (USTC), China	2.000000	0.17
Indian Institute of Science (IISc), India	1.000000	0.08
State Key Laboratory of Advanced Waterproof Materials, China	1.000000	0.08
Yibin University, China	0.500000	0.04

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