Ga-on-In Substitution with Zn Vacancies in Zn3In2S6 Induces Electron–Hole Asymmetry and In─O Bond Weakening for Coupled Two-Electron Oxygen Reduction and H2O2 Stabilization

Journal:

Advanced Materials

Published:

2026-03-19

DOI:

10.1002/adma.202522831

Affiliations:

7

Authors:

11

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Institutions	Authors	Share
City University of Hong Kong (CityU), China	4.000000	0.36
MOE Key Laboratory of Automobile Materials, JLU, China	2.000000	0.18
Northeast Forestry University (NEFU), China	1.000000	0.09
State Key Laboratory of Chemical Reaction Dynamics, China	1.000000	0.09
International Iberian Nanotechnology Laboratory (INL), Portugal	1.000000	0.09
The Chinese University of Hong Kong (CUHK), China	1.000000	0.09
Department of Chemistry, Tsinghua, China	1.000000	0.09

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