Field-Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α-In2Se3

Journal:

Advanced Materials

Published:

2026-01-30

DOI:

10.1002/adma.202523096

Affiliations:

7

Authors:

7

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Institutions	Authors	Share
University of Illinois at Urbana-Champaign (UIUC), United States of America (USA)	3.000000	0.43
Frederick Seitz Materials Research Laboratory (FS-MRL), UIUC, United States of America (USA)	2.000000	0.29
University of California, Irvine (UCI), United States of America (USA)	1.000000	0.14
The University of Chicago (UChicago), United States of America (USA)	1.000000	0.14

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