Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS2 Field Effect Transistors

Journal:

Advanced Materials

Published:

2026-03-17

DOI:

10.1002/adma.202523661

Affiliations:

4

Authors:

11

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Institutions	Authors	Share
University of Cambridge, United Kingdom (UK)	7.000000	0.64
Diamond Light Source Ltd., United Kingdom (UK)	2.000000	0.18
WPI International Center for Materials Nanoarchitectonics (WPI-MANA), NIMS, Japan	1.000000	0.09
Research Center for Electronic and Optical Materials, NIMS, Japan	1.000000	0.09

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