In‐situ p‐Doping of Nanometer Tellurium‐based Oxide for Room‐Temperature CMOS Circuits

Journal:

Advanced Materials

Published:

2026-03-17

DOI:

10.1002/adma.72813

Affiliations:

3

Authors:

11

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Institutions	Authors	Share
State Key Laboratory of Electronic Thin Films and Integrated Devices, UESTC, China	7.000000	0.64
Pohang University of Science and Technology (POSTECH), South Korea	3.000000	0.27
University of Electronic Science and Technology of China (UESTC), China	1.000000	0.09

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