Facile Formation of Oxygen‐Vacancy Gradient Enables In Situ Uniform Prelithiation in Vanadium Oxide Thin‐Film Batteries
- Journal:
- Angewandte Chemie International Edition
- Published:
- DOI:
- 10.1002/anie.8496886
- Affiliations:
- 4
- Authors:
- 6
| Institutions | Authors | Share |
|---|---|---|
| Southeast University (SEU), China | 0.33 | |
| Institute of Physics (IOP), CAS, China | 0.33 | |
| China Electronics Technology Group Corporation (CETC), China | 0.17 | |
| Suzhou Etag-Technology Corporation, China | 0.17 |