Pressure-Induced Electronic Topological Transition and Superconducting Transition in Two-Dimensional Topological Insulator GeBi2Te4

Journal:

Inorganic Chemistry

Published:

2026-06-18

DOI:

10.1021/acs.inorgchem.6c00795

Affiliations:

4

Authors:

9

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Institutions	Authors	Share
State Key Laboratory of High Pressure and Superhard Materials, JLU, China	5.000000	0.56
MOE Key Laboratory of Material Simulation Methods and Software, JLU, China	2.000000	0.22
Shandong University of Technology, China	1.500000	0.17
MOE Key Laboratory of Artificial Structures and Quantum Control, SJTU, China	0.500000	0.06