Gate Voltage Regulation of Surface Properties in Polyethylenimine-Doped Indium Oxide Transistors for Enhanced Detection of Low-Concentration NO2 at Room Temperature
- Journal:
- The Journal of Physical Chemistry Letters
- Published:
- DOI:
- 10.1021/acs.jpclett.5c00950
- Affiliations:
- 3
- Authors:
- 8
| Institutions | Authors | Share |
|---|---|---|
| Chongqing University (CQU), China | 0.75 | |
| City University of Hong Kong (CityU), China | 0.13 | |
| Institute of Chemical Materials (ICM), CAEP, China | 0.13 |