Band Alignment Engineering in β-Ga2O3/4H-SiC Polar Heterojunctions via Orientation Selection: Interfacial Band Edge States and Hole Trapping

Journal:
The Journal of Physical Chemistry Letters
Published:
DOI:
10.1021/acs.jpclett.5c02090
Affiliations:
8
Authors:
13
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Institutions Authors Share
Wuhan University (WHU), China
7.000000
 0.54
Xiamen University (XMU), China
3.000000
 0.23
Hunan University (HNU), China
1.000000
 0.08
State Grid Corporation of China (SGCC), China
1.000000
 0.08
Zhengzhou University (ZZU), China
1.000000
 0.08
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