Plasma-Tailored Intrinsic Defect Engineering for BiFeO3 Homojunctions: A Non-element Intrusive Doping Strategy

Journal:
The Journal of Physical Chemistry Letters
Published:
DOI:
10.1021/acs.jpclett.5c03140
Affiliations:
3
Authors:
10
Go to article
Institutions Authors Share
Lanzhou University (LZU), China
8.500000
 0.85
Huazhong University of Science and Technology (HUST), China
1.000000
 0.10
Sun Yat-sen University (SYSU), China
0.500000
 0.05
Interested in Electronics, Sensors and Digital Hardware?