Polaron-Induced Midgap States in Ovonic Threshold Switching Material for 3D Phase-Change Memory Applications

Journal:
The Journal of Physical Chemistry Letters
Published:
DOI:
10.1021/acs.jpclett.5c03532
Affiliations:
2
Authors:
10
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Institutions Authors Share
State Key Laboratory on Integrated Optoelectronics, China
9.000000
 0.90
Huazhong University of Science and Technology (HUST), China
1.000000
 0.10
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