Revealing the Divergence in Nonradiative Recombination Dynamics of Deep-Level Defects in CsGeBr3: Intrinsic Tolerance of Br Vacancies versus Strain-Induced Passivation of CsBr Antisites

Journal:
The Journal of Physical Chemistry Letters
Published:
DOI:
10.1021/acs.jpclett.6c00020
Affiliations:
1
Authors:
2
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Institutions Authors Share
Inner Mongolia University, China
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