Pressure-Induced Schottky-Ohmic Contact Transition in Pt/Si Heterojunction Via Interfacial Barrier Modulation for Ultra-Enhanced Photocurrent Generation

Journal:
The Journal of Physical Chemistry Letters
Published:
DOI:
10.1021/acs.jpclett.6c00816
Affiliations:
3
Authors:
10
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Institutions Authors Share
Institute of Solid State Physics (ISSP), HFIPS CAS, China
6.500000
 0.65
University of Science and Technology of China (USTC), China
2.500000
 0.25
Anqing Normal University, China
1.000000
 0.10
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