Oxygen Vacancy Induced 2D Bi2SeO5 Non-Volatile Memristor for 1T1R Integration

Journal:
Nano Letters
Published:
DOI:
10.1021/acs.nanolett.5c01345
Affiliations:
4
Authors:
16
Go to article
Institutions Authors Share
Nanjing University of Science and Technology (NUST), China
9.000000
 0.56
Nanjing University of Posts and Telecommunications (NUPT), China
5.000000
 0.31
South China Normal University (SCNU), China
2.000000
 0.13
Interested in Nanotechnology?