Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices

Journal:
Nano Letters
Published:
DOI:
10.1021/acs.nanolett.5c01992
Affiliations:
8
Authors:
17
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Institutions Authors Share
RWTH Aachen University (RWTH Aachen), Germany
7.833333
 0.46
University of Granada (UGR), Spain
3.000000
 0.18
Jülich Research Centre (FZJ), Germany
2.833333
 0.17
AMO, Germany
1.833333
 0.11
University of Stuttgart, Germany
1.000000
 0.06
Aixtron SE, Germany
0.500000
 0.03
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