Demonstration of Highly Scaled AlScN Ferroelectric Diode Memory with a Storage Density of >100 Mbit/mm2

Journal:
Nano Letters
Published:
DOI:
10.1021/acs.nanolett.5c02961
Affiliations:
3
Authors:
16
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Institutions Authors Share
University of Pennsylvania (Penn), United States of America (USA)
15.000000
15.000000
 0.94
Johns Hopkins University (JHU), United States of America (USA)
1.000000
 0.06
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