Compatibility between Schottky–Mott Limit and High Carrier-Injection Efficiency in Metal–van der Waals Semiconductor Junctions

Journal:

Nano Letters

Published:

2025-10-01

DOI:

10.1021/acs.nanolett.5c03335

Affiliations:

5

Authors:

9

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Institutions	Authors	Share
Institute of Semiconductors (IOS), CAS, China	3.333333	0.37
University of Chinese Academy of Sciences (UCAS), China	2.333333	0.26
Eastern Institute of Technology, Ningbo (EIT), China	2.000000	0.22
Hunan University of Technology, China	1.000000	0.11
Innovation Center for Quantum Information and Quantum Frontiers, China	0.333333	0.04

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