Heterogenous Integration of Boron-Doped p-Diamond with Monolayer n-MoS2 for PN Junctions Operating at Room Temperature

Journal:
Nano Letters
Published:
DOI:
10.1021/acs.nanolett.5c04059
Affiliations:
2
Authors:
6
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Institutions Authors Share
Center for Nanoscale Materials (CNM), ANL, United States of America (USA)
4.000000
 0.67
Jackson State University, United States of America (USA)
2.000000
 0.33
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