Large-Scale Dual-Channel WSe2 Reconfigurable Field-Effect Transistors with Charge-Trapping Layer for 2T TCAM and Reconfigurable Logic

Journal:

Nano Letters

Published:

2026-02-04

DOI:

10.1021/acs.nanolett.5c04744

Affiliations:

2

Authors:

4

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Institutions	Authors	Share
Yonsei University, South Korea	4.000000	1.00

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