Partially Oxidized TaS2 as a High-Quality Gate Stack for Two-Dimensional Transistors

Journal:
Nano Letters
Published:
DOI:
10.1021/acs.nanolett.5c05052
Affiliations:
4
Authors:
11
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Institutions Authors Share
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS, China
6.666667
 0.61
University of Science and Technology of China (USTC), China
3.833333
 0.35
Suzhou University of Science and Technology, China
0.500000
 0.05
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