Self-Consistent Electrostatic Modeling of Gated Narrow-Gap Topological Insulators

Journal:

Nano Letters

Published:

2026-02-19

DOI:

10.1021/acs.nanolett.5c05762

Affiliations:

1

Authors:

11

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Institutions	Authors	Share
University of Würzburg (JMU), Germany	11.000000 11.000000	1.00

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