Revealing Asymmetric Off-State Drain/Source Stress Reliability and Mechanisms in IGZO-FETs

Journal:: Nano Letters
Published:: 2026-03-31
DOI:: 10.1021/acs.nanolett.5c05938
Affiliations:: 1
Authors:: 17

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Institutions	Authors	Share
Beijing Advanced Innovation Center for Integrated Circuits, China	17.000000 17.000000	1.00

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