Hidden Stacking Fault Charge Traps in Hexagonal Boron Nitride and Their Impact on Dielectric Breakdown

Journal:

Nano Letters

Published:

2026-02-24

DOI:

10.1021/acs.nanolett.5c06347

Affiliations:

4

Authors:

6

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Institutions	Authors	Share
Rice University, United States of America (USA)	4.000000	0.67
Research Center for Electronic and Optical Materials, NIMS, Japan	1.000000	0.17
WPI International Center for Materials Nanoarchitectonics (WPI-MANA), NIMS, Japan	1.000000	0.17

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