In Situ Engineering of Vertical Indium Gradients via Sputtering Kinetics for High-Performance IGZO Channel-All-Around Transistors

Journal:
Nano Letters
Published:
DOI:
10.1021/acs.nanolett.6c00123
Affiliations:
2
Authors:
20
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Institutions Authors Share
Beijing Superstring Academy of Memory Technology, China
17.000000
17.000000
 0.85
Institute of Microelectronics (IME), CAS, China
3.000000
 0.15
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