Electric-Field Modulation of Trap-Induced Energy Barriers at Single-Grain Boundaries in Monolayer C10-DNTT Transistors

Journal:

Nano Letters

Published:

2026-02-25

DOI:

10.1021/acs.nanolett.6c00236

Affiliations:

4

Authors:

11

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Institutions	Authors	Share
Nanjing National Laboratory of Microstructures (NNLM), NJU, China	4.333333	0.39
MOE Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances, NJU, China	4.333333	0.39
Sun Yat-sen University (SYSU), China	2.000000	0.18
School of Integrated Circuits, NJU, China	0.333333	0.03

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