Top-Gated Monolayer MoS2 Transistors on Growth Substrate by One-Step Integration of High‑κ Dielectrics and Low-Resistance Bilayer Contacts
- Journal:
- Nano Letters
- Published:
- Affiliations:
- 3
- Authors:
- 12
| Institutions | Authors | Share |
|---|---|---|
| Beijing National Laboratory for Condensed Matter Physics, IOP CAS, China | 0.46 | |
| University of Chinese Academy of Sciences (UCAS), China | 0.46 | |
| CAS Songshan Lake Materials Laboratory, China | 0.08 |