Scalable Integration of Cavity-Enhanced Silicon Vacancy Centers on a CMOS-Compatible 4H-SiCOI Platform

Journal:

Nano Letters

Published:

2026-04-22

DOI:

10.1021/acs.nanolett.6c00613

Affiliations:

5

Authors:

16

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Institutions	Authors	Share
Shanghai Institute of Microsystem and Information Technology (SIMIT), CAS, China	9.500000	0.59
University of Chinese Academy of Sciences (UCAS), China	2.833333	0.18
Shanghai Institute of Technical Physics (SITP), CAS, China	1.833333	0.11
University of Shanghai for Science and Technology (USST), China	1.000000	0.06
ShanghaiTech University, China	0.833333	0.05

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